Conference | Nishiguchi Lab

2025

Parallel Silicon Single-Electron Pumps for Generating Nanoampere Current
G. Yamahata, T. Shimizu, K. Nishiguchi, A. Fujiwara

2025 Silicon Nanoelectronics Workshop (SNW 2025), Jun. 2025

2024

Electron Thermometry using Subthreshold Swing of Si Nano Transistors
Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono

37th International Microprocesses and Nanotechnology Conference (MNC2024), Nov. 2024
AC-signal sensing beyond cutoff frequency using a DRAM
Chloe Salhani, Kensaku Chida, Toshiaki Hayashi, Katsuhiko Nishiguchi

37th International Microprocesses and Nanotechnology Conference (MNC2024), Nov. 2024
Noise Cross-Correlation Measurement of Capacitively-Coupled Silicon Nanometer-Scale Dots via Electron Counting Statistics
Kensaku Chida, Antoine Andrieux, Katsuhiko NIshiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul. 2024
AC Signal-Sensing 6 Orders of Magnitude above Cutoff Frequency in DRAMs with a Non-Equilibrium Nanoscale Dot
Chloe Salhani, Kensaku Chida, Toshiaki Hayashi, Katsuhiko Nishiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul. 2024
Energy Costs of Precise Erasure for Nanoscale Silicon Dot Memory with Non-equilibrium Initial State
Takase Shimizu, Kensaku Chida, Gento Yamahata, Katsuhiko Nishiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul. 2024
First-principal calculations for giant valley splitting in stressed silicon thin films
Toshiaki Hayashi, Hiroyuki Kageshima, Jinichiro Noborisaka, Katsuhiko Nishiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul. 2024
Experimental verification of Landauer principle under a constraint of nonequilibrium initial state
T. Shimizu, K. Chida, G. Yamahata, K. Nishiguchi

Frontiers in Non-equilibrium Physics 2024, Jul. 2024
[Invited] Noise-to-energy conversion in silicon single-electron nanodevices
K. Chida, A. Fujiwara, K. Nishiguchi

2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), Jul. 2024
Ferromagnetic Manganese Silicide Nanoparticles Formed by Ion Implantation in Silicon
R, Ohsugi, M. Kawano, Y. K. Wakabayashi, Y. Krockenberger, H. Sumikura, J. Noborisaka, K. Nishiguchi

Silicon Nanoelectronics Workshop 2024, Jun. 2024

2023

Correlation between electric potentials in a variable-range hopping regime [T4-11C-05]
Toshiaki Hayashi, Yasuhiro Tokura, Katsuhiko Nishiguchi

STATPHYS28, Aug. 2023
Electron counting statistics for observation of noise-to-energy conversion in a nanoscale dot in Gaussian noise induced nonequilibrium steady states [T2a-07B-08]
Kensaku Chida, Akira Fujiwara, Katsuhiko Nishiguchi

STATPHYS28, Aug. 2023
Negative cross-correlation of thermal noise in capacitively-coupled nanometer-scale dots
Kensaku Chida, Antoine Andrieux, Katsuhiko Nishiguchi

YSF-YITP Symposium, Aug. 2023
Application of Ambient Pressure-Driven Pumping Technology towards Ultra Low-Power Underwater Sensing
T. Fukuba, A. Fujiwara, K. Nishiguchi, M. Bergaud, S. Grall, S. Li, S. H. Kim, N. Clémen

International Symposium on Underwater Technology (UT23), Mar. 2023

2022

Room-temperature single-electron sensor for AC signals beyond an RC time constant ~ Energy transfer via a non-leakage DRAM in non-equilibrium ~
K. Nishiguchi, A. Fujiwara, K. Chida

35th International Microprocesses and Nanotechnology Conference (MNC 2022), Nov. 2022
Redox-labelled Electrochemical Aptasensors with Nano-supported Cancer Cells
S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, T. Fujii, S. H. Kim, N. Clémen

35th International Microprocesses and Nanotechnology Conference (MNC 2022), Nov. 2022

2021

Observation of Seebeck Effect in a Silicon Electron Box by Electron Counting Statistics
K. Chida, A. Fujiwara, K. Nishiguchi

International Symposium on Novel maTerials and quantum Technologies (ISNTT2021), Dec. 2021
Temperature Dependence of Low-frequency Capacitance Due to Variablerange Hopping
T. Hayashi, Y. Tokura, K. Nishiguchi

International Symposium on Novel maTerials and quantum Technologies (ISNTT2021), Dec. 2021
[Invited] Single-Electron Manipulation in an Atto-Farad-Capacitor DRAM
nan

40th ECS Fall Meeting, Oct. 2021
Jahn-Teller Distortion in confined DNA
I. Madrid, A. Chovin, C. Gerbelo, S. C. Grall, S. Li, T. Fujii, T. Yamaguchi, K. Nishiguchi, A. Fujiwara, S. H. Kim, A. Anne, C. Demaille, N. Clement

2021 International Conference on Solid State Devices and Materials (SSDM 2021), Sep. 2021

2020

Nanometer-Scale Temperature Measurement Based on Single-Electron Counting Statistics in a Nanowire Si MOSFET
K. Chida, A. Fujiwara, K. Nishiguchi

33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Nov. 2020
Theoretical Study on Reflectometry Technique for Fast Sensing of an FET sensor
K. Nishiguchi, Akira Fujiwara

33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Nov. 2020
[Invited] Control of thermal noise originating from single-electron Brownian motion
K. Nishiguchi, C. Kensaku, A. Fujiwara

The 6th International Symposium in Shizuoka University 2020, Mar. 2020

2019

Si-nanowire-FET sensor detecting high-frequency mechanical oscillation of a multilayer-graphene MEMS by means of reflectometry technique
K. Nishiguchi, A. Fujiwara

32th International Microprocesses and Nanotechnology Conference (MNC2019), Oct. 2019

2018

[Invited] Information-powered operation of silicon single-electron device
K. Chida, K. Nishiguchi, A. Fujiwara

International Symposium for Materials Scientists "Inspiration for Innovation by Interaction (ISMS III), Dec. 2018
[Invited] Tunable-barrier electron pump for quantum current standards and information-to-energy converters
A. Fujiwara, G. Yamahata, C. Kensaku, K. Nishiguchi

China-Japan International Workshop on Quantum Technologies (QTech2018), Apr. 2018

2017

[Invited] Ultimate Single Electronics with Silicon Nanowire MOSFETs
A. Fujiwara, K. Nishiguchi, G. Yamahata, K. Chida

2017 Silicon Nanoelectronics Workshop (SNW2017), Jun. 2017

2016

[Invited] Gigahertz single-electron pump for quantum current standard
A. Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin, M. Kataoka

33rd International Conference on the Physics of Semiconductors (ICPS-33), Aug. 2016
Electric current generation with Maxwell's demon in a Si single-electron device
K. Chida, K. Nishiguchi, A. Fujiwara

33rd International Conference on the Physics of Semiconductors (ICPS-33), Aug. 2016

2015

Correlated phonons in a micro-nano-electromechanical system
M. Villiers, I. Mahboob, K. Nishiguchi, D. Hatanaka, A. Fujiwara, H.Yamaguchi

International Symposium on Nanoscale Transport and Technology (ISNTT2015), Nov. 2015
Thermal noise suppression by feedback control to single-electron motion
K. Chida, K. Nishiguchi, G. Yamahata, H. Tanaka, A. Fujiwara

International Symposium on Nanoscale Transport and Technology (ISNTT2015), Nov. 2015
Electron Emission Using Multilayered-Graphene/SiO2/Si Heterodevice Driven with Low-Voltage Supply in Low Vacuum
D. Yoshizumi, K. Nishiguchi, Y. Sekine, K. Furukawa, A. Fujiwara, M. Nagase

28th International Microprocesses and Nanotechnology Conference (MNC2015), Nov. 2015
Fabrication of Triple-Dot Single-Electron Transistor and its Turnstile Operation
M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi

28th International Microprocesses and Nanotechnology Conference (MNC2015), Nov. 2015
Selective-Layer-Free Blood Ionogram Using a 0D Nanotransistor Biosensor
R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, N. Clement

28th International Microprocesses and Nanotechnology Conference (MNC2015), Nov. 2015
Gigahertz single-electron pump towards a representation of the new ampere
A. Fujiwara, G. Yamahata, K. Nishiguchi

2015 International Conference on Solid State Devices and Materials (SSDM2015), Sep. 2015
Ultrafast single-charge transfer in silicon up to 8 GHz
G. Yamahata, K. Nishiguchi, S. P. Giblin, M. Kataoka, A. Fujiwara

Silicon Quantum Electronics Workshop 2015, Aug. 2015
Error detection and correction of single-electron transfer
H. Tanaka, G. Yamahata, K. Nishiguchi, A. Fujiwara

Silicon Quantum Electronics Workshop 2015, Aug. 2015
Gigahertz single-electron transfer via a single-trap level in silicon
G. Yamahata, K. Nishiguchi, M. Kataoka, A. Fujiwara

21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), Jul. 2015
[Invited] Nanoscale Silicon MOSFET for Metrology and Valleytronics Applications
A. Fujiwara, G. Yamahata, J. Noborisaka, K. Nishiguchi

2015 UK-Japan Silicon Nanoelectronics& Nanotechnology (UK-Japan Si NANO2), Jul. 2015
Gate tuning of direct optical transitions in silicon
J. Noborisaka, K. Nishiguchi, A. Fujiwara

2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2015), Jun. 2015
[Invited] What happens in a small transistor with single-electron resolution?
K. Nishiguchi

The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), Jun. 2015

2014

Zero Dimensional Ion-Sensitive Field-Effect Transistors
R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, D. Vuillaume, N. Clement

27th International Microprocesses and Nanotechnology Conference (MNC 2014), Nov. 2014
Violation of equipartition of energy in thermal noise of a small DRAM
K. Nishiguchi, A. Fujiwara

27th International Microprocesses and Nanotechnology Conference (MNC 2014), Nov. 2014
Phonon-lasing (and mode cooling) in an electromechanical resonator
I. Mahboob, K. Nishiguchi, A. Fujiwara, H. Yamaguchi

27th International Microprocesses and Nanotechnology Conference (MNC 2014), Nov. 2014
Tunnel diode composed of MoS2/SiO2/Si heterojunction
K. Nishiguchi, A. Castellanos-Gomez, H. Yamaguchi, A. Fujiwara, H. S. J., van, der Zan, G. A. Steele

27th International Microprocesses and Nanotechnology Conference (MNC 2014), Nov. 2014
Thermal-Noise Suppression in Nanometer-Scale Si Field-Effect Transistors by Feedback Control with Single-Electron Resolution
K. Chida, K. Nishiguchi, G. Yamahata, A. Fujiwara

2014 Solid State Devices and Materials (SSDM2014), Sep. 2014
Enhanced inter-band dipole transition due to large valley splitting at the Si/SiO2 interface
J. Noborisaka, K. Nishiguchi, A. Fujiwara

Silicon Quantum Electronics Workshop 2014, Aug. 2014
[Invited] Silicon nanowire MOSFETs for diverse applications
A. Fujiwara, K Nishiguchi, G. Yamahata

The 6th IEEE International Nanoelectronics Conference (IEEE INEC2014), Jul. 2014
Water electrolysis and energy harvesting with 0D Ion-Sensitive Field-Effect Transistors
N. Clement, K Nishiguchi, J-F Dufreche, D. Guerin, A. Fujiwara, D. Vuillaume

The 1st International Symposium on Energy Challenges & Mechanics (ECM2014), Jul. 2014

2013

Multimode parametric resonance dynamics in an electromechanical resonator
I. Mahboob, M. Mounaix, K. Nishiguchi, A. Fujiwara, H. Yamaguchi

The International Symposium on Nanoscale Transport and Technology (ISNTT2013), Nov. 2013
Mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles
G. Yamahata, K. Nishiguchi, A. Fujiwara

The International Symposium on Nanoscale Transport and Technology (ISNTT2013), Nov. 2013
Ultimate Integration of a PDMS-Based Lab-on-a-Chip with Nanotransistor Bio-sensors
R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, D. Vuillaume, N. Clement

26th International Microprocesses and Nanotechnology Conference (MNC 2013), Nov. 2013
High-charge-sensitivity radio-frequency field-effect transistor with large and tunable readout frequency
K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J., van, der Zan, G. A. Steele

26th International Microprocesses and Nanotechnology Conference (MNC 2013), Nov. 2013
A nanoelectromechanical resonator embedded in a microelectromechanical resonator
N. Perrissin, I. Mahboob, K. Nishiguchi, D. Hatanaka, Y. Okazaki, A. Fujiwara, H. Yamaguchi

The International Symposium on Nanoscale Transport and Technology (ISNTT2013), Nov. 2013
Dual-gate Silicon Single-Electron Transistor Threshold Voltage mapping at Nanoscale with a Scanning Microwave Microscope
N. Clement, F. Wang, K. Nishiguchi, A. Fujiwara, G. Patriarche, D. Troadec, B. Legrand, G. Dambrine, D. Theron

26th International Microprocesses and Nanotechnology Conference (MNC 2013), Nov. 2013
Transducing Energy Loss in Water Electrolysis with a 0D Ion-Sensitive Field-Effect Transistor
N. Clement, K. Nishiguchi, J-F. Dufreche, D. Guerin, G. Patriarche, D. Troadec, A. Fujiwara, D. Vuillaume

APS March Meeting 2013, Mar. 2013
Dielectric Polarization 1/f Noise: a signature of defect-free oxides at nanotransistors interface
N. Clement, K. Nishiguchi, D. Vuillaume, A. Fujiwara

APS March Meeting 2013, Mar. 2013
Interferometric Scanning Microwave Microscope for Nanotechnology Application
N. Clement, T. Dargen, H. Tanbakuchi, K. Nishiguchi, R. Sivakumarasamy, F. Wang, A. Fujiwara, D. Ducatteau, G. Dambrine, D. Vuillaume, B. Legrand, D. Theron

APS March Meeting 2013, Mar. 2013
[Invited] Single-electron counting statistics of shot and thermal noise in nanowire Si MOSFET
K. Nishiguchi

Nanosciences Fondation-Quantum Nanoelectronics Seminar, Feb. 2013
Crossover of transfer mechanism in Si single-electron turnstiles
G. Yamahata, K. Nishiguchi, A. Fujiwara

2013 International Workshop On Silicon Quantum Electronics, Feb. 2013

2012

High-frequency properties of Si single-electron transistor
H. Takenaka, M. Shinohara, T. Uchida, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi

2012 Silicon Nanoelectronics Workshop, Jun. 2012
[Invited] Silicon Single-Electron Transfer Devices: Ultimate Control of Electric Charge
A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen, Y. Ono

2012 Silicon Nanoelectronics Workshop, Jun. 2012
One-by-One H2 Bubble Counting during Water Electrolysis with a Chemical Electrometer
N. Clement, K. Nishiguchi, J-F Dufreche, D. Guerin, A. Fujiwara, D. Vuillaume

2012 MRS Spring Meeting, Apr. 2012

2011

Stochastic resonance using a steep-subthreshold-swing transistor
K. Nishiguchi, A. Fujiwara

24th International Microprocesses and Nanotechnology Conference (MNC 2011), Oct. 2011
Mechanical idler generation
I. Mahboob, Q. Wilmar, K. Nishiguchi, A. Fujiwara, H. Yamaguchi

2011 International Conference on Solid State Devices and Materials (SSDM2011), Sep. 2011
Accuracy of Single-electron Shuttle Transfer in Si Nanowire MOSFETs
G. Yamahata, K. Nishiguchi, A. Fujiwara

19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19), Jul. 2011
Observation of New Current Peaks of Si Single-Electron Transistor with a Single-Hole Trap
M. Sinohara, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi

Silicon Nanoelectronics Workshop 2011, Jun. 2011
Single-electron stochastic resonance using Si nano-wire transistors
K. Nishiguchi, A. Fujiwara

International Symposium on Nanoscale Transport and Technology (ISNTT2011), Jan. 2011
Shuttling Transfer of Single Electrons in Si Nanowire MOSFETs
G. Yamahata, K. Nishiguchi, A. Fujiwara

International Symposium on Nanoscale Transport and Technology (ISNTT2011), Jan. 2011

2010

[Invited] Single-electron applications using nano-wire MOSFETs
K. Nishiguchi, A. Fujiwara

2010 Workshop on Innovative Devices and Systems (WINDS), Dec. 2010
Fast sensing using single-electron stochastic resonance in Si nano-wire transistors
K. Nishiguchi, A. Fujiwara

23rd International Microprocesses and Nanotechnology Conference (MNC 2010), Nov. 2010
Strong Stark effect of electroluminescence in thin SOI MOSFETs
J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, A. Fujiwara

2010 International Conference on Solid State Devices and Materials (SSDM 2010), Sep. 2010
Body-biased steep-subthreshold-swing MOS (BS-MOS) with small hysteresis, off current, and drain voltage
K. Nishiguchi, A. Fujiwara

2010 International Conference on Solid State Devices and Materials (SSDM 2010), Sep. 2010
[Invited] Fabrication method for triple-coupled dots based on pattern-dependent oxidation
Y. Takahashi, M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, J.-B. Choi

5th International WorkShop on New Group IV Semiconductor Nanoelectronics, Jun. 2010
Analysis of Tunneling Potential of Si SETs Fabricated by Pattern-Dependent Oxidation
Y. Kato, M. Jo, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J.-B. Choi

2010 Silicon Nanoelectronics Workshop, Jun. 2010
[Invited] Single dopant effects in silicon nano transistors
Y. Ono, M. Khalafalla, K. Nishiguchi, A. Fujiwara

2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore’ & ‘Beyond CMOS’ Era, Mar. 2010
[Invited] Single electron transfer technology using Si nanowire MOSFETs
A. Fujiwara, K. Nishiguchi, Y. Ono

2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore’ & ‘Beyond CMOS’ Era, Mar. 2010
In plane transport in a double layer crystalline silicon stracture with an SiO2 barrier
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisarwa, K. Muraki

2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore’ & ‘Beyond CMOS’ Era, Mar. 2010

2009

Fabrication of triple-dot single-electron transistor and its single-electron-transfer operation
M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J-B Choi

2009 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2009), Nov. 2009
[Invited] Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices
A. Fujiwara, K. Nishiguchi, Y. Ono

International Conference on Nanoscience & Technology, China 2009, Nov. 2009
Single-Electron Stochastic Resonance using Si Nano-Wire Transistors
K. Nishiguchi, S. Miyamoto, A. Fujiwara

22th International Microprocesses and Nanotechnology Conference (MNC 2009), Nov. 2009
Random Telegraph Signal and Low Frequency Noise in Silicon Charge-Sensitive Electrometers
N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

2009 International Conference on Solid State Devices and Materials (SSDM 2009), Oct. 2009
[Invited] Identification of Single Boron Acceptors in Nanowire MOSFETs
Y. Ono, M. A. H. Khalafalla, S. Horiguchi, K. Nishiguchi, A. Fujiwara

2009 International Conference on Solid State Devices and Materials (SSDM 2009), Oct. 2009
Tunnel Spectroscopy of Electron Subbands in Thin SOI MOSFETs
J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, A. Fujiwara

2009 International Conference on Solid State Devices and Materials (SSDM 2009), Oct. 2009
Single-electron Counting Statistics of Shot Noise in Nanowire Si MOSFETs
K. Nishiguchi, Y. Ono, A. Fujiwara

2009 International Conference on Solid State Devices and Materials (SSDM 2009), Oct. 2009
Double-dot single-electron transistor fabricated in silicon nanowire
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J.-B. Choi

International Workshop on Photons and Spins in Nanostructures, Jul. 2009
Electron-hole transport in a 40 nm thick silicon slab
K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, K. Muraki

EP2DS-18, Jul. 2009
Single-electron activation over an oscillating barrier in silicon nanowire MOSFETs
S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara

EP2DS-18, Jul. 2009
Fabrication of Coupled-Dot Single-Electron Transistor in Silicon Nanowire
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J.-B. Choi

2009 Silicon Nanoelectronics Workshop, Jun. 2009
Position Analysis of Single Acceptors in Si Nanoscale Field-Effect Transistors
M. A. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara

2009 Silicon Nanoelectronics Workshop, Jun. 2009
In-plane transport in a double layer crystalline silicon structure with an SiO2 barrier
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, K. Muraki

International Symposium on Nanoscale Transport and Technology (ISNTT2009), Jan. 2009
Single-electron-based stochastic circuit for pattern recognition using nano-FETs
K. Nishiguchi, A. Fujiwara

International Symposium on Nanoscale Transport and Technology (ISNTT2009), Jan. 2009
Detection and Position Analysis of Single and Coupled Acceptors in Si Nanoscale Field-Effect Transistors
M. A. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara

International Symposium on Nanoscale Transport and Technology (ISNTT2009), Jan. 2009

2008

Si nano-wire ion-sensitive field-effect transistors with a shared floating gate
K. Nishiguchi, N. Clement, Y. Yamaguchi, A. Fujiwara

21th International Microprocesses and Nanotechnology Conference (MNC 2008), Oct. 2008
[Invited] Silicon Single-Electron Devices and Their Applications
A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, Y. Takahashi

2008 Tera-level NanoDevices (TND) Technical Forum, Oct. 2008
Single-electron-resolution electrometer based on field-effect transistor
K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, H. Yamaguchi

2008 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), Jul. 2008
Dynamics of Single-Electron Capture in Si Nanowire MOSFETs
A. Fujiwara, S. Miyamoto, K. Nishiguchi, Y. Ono, N. M. Zimmerman

Silicon Nanoelectronics Workshop 2008, Jun. 2008

2007

Single-electron circuit for stochastic data processing using nano-MOSFETs
K. Nishiguchi, A. Fujiwara

International Electron Devices Meeting (IEDM), Dec. 2007
[Invited] Charge Transport in Boron-Doped Nano MOSFETs: Towards Single-Dopant Electronics
Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara

Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V, 2007), Nov. 2007
Low-energy electron emission using a Si/SiO2/Si cathode for nano-decomposition
K. Nishiguchi, M. Nagase, T. Yamaguchi, A. Fujiwara, H. Yamaguchi

20th International Microprocesses and Nanotechnology Conference (MNC 2007), Nov. 2007
[Invited] A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs
H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, H. Satoh

The 6-th annual International Conference on Global Research and Education(inter academia), Sep. 2007
Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
A. Fujiwara, K. Nishiguchi, Y. Ono

2007 International Conference on Solid State Devices and Materials (SSDM), Sep. 2007
Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono

2007 International Conference on Solid State Devices and Materials (SSDM), Sep. 2007
Identification of Single and Coupled Acceptors in Silicon Nano Field-Effect Transistors
M. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara

2007 International Conference on Solid State Devices and Materials (SSDM), Sep. 2007
Single-electron ratchet using silicon nanowire MOSFET
A. Fujiwara, K. Nishiguchi, Y. Ono

International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17 + 13 MSS), Jul. 2007
[Invited] Room-temperature-operating single-electron devices using silicon nanowire MOSFET
K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi

2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Jun. 2007
Dopant-mediated charge transport in boron-doped nano MOSFETs
Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi

2007 Silicon Nanoelectronics Workshop, Jun. 2007
[Invited] Recent progress in integration of silicon single-electron devices
H. Inokawa, K. Nishiguchi, Y. Ono, A. Fujiwara, Y. Takahashi

The 4th International Workshop on Ubiquitous Knowledge Network Environment, Mar. 2007
[Invited] Hopping conduction in buried-channel SOI MOSFETs with shallow impurities
Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi

International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI) 2007, Feb. 2007

2006

Metal-Oxide-Semiconductor-Based Single-Electronics
H. Inokawa, K. Nishiguchi, A. Fujiwara, Y. Ono, Y. Takahashi, H. Yamaguchi

The 5-th annual International Conference on Global Research and Education (inter-Academia), Sep. 2006
Infrared detection with silicon nano transistors
K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi

Solid State Devices and Materials (SSDM2006), Sep. 2006
Transfer and detection of single-electron using metal-oxide-semiconductor field-effect transistors
W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N. J. Wu

2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), Jul. 2006
Long-Retention Gain-Cell DRAM Using Undoped SOI MOSFET
K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi

Silicon Nanoelectronics Workshop 2006, Jun. 2006
[Invited] Impurity conduction and its control in phosphorus-doped SOI MOSFET
Y. Ono, K. Nishiguchi, K. Takashina, H. Inokawa, S. Horiguchi, ndY. Takahashi

2006 Silicon Nanoelectronics Workshop, Jun. 2006
Room-Temperature Operation of Data Processing Circuit Based on Single-Electron Transfer and Detection with Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi

Silicon Nanoelectronics Workshop 2006, Jun. 2006

2005

[Invited] Single-Electron Devices and Circuits Based on MOS Processes
H. Inokawa, Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi

2005 Tera-level NanoDevices (TND) Technical Forum, Oct. 2005
Back-gate effect on Coulomb blockade in SOI trench wires
K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi

Silicon Nanoelectronics Workshop 2005, Jun. 2005
[Invited] Silicon-based single-electron devices
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa

Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May. 2005
[Invited] Room- and Low-Temperature Characteristics of Phosphorus-doped SOI MOSFET
Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, Y. Takahashi

International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI) 2005, Jan. 2005

2004

[Invited] Single-Electron Device applications using their special functionalities
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa

The 6th International Conference on Nano-molecular Electronics (ICNME) 2004, Dec. 2004
Room-temperature single-electron transfer and detection with silicon nanodevices
K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi

International Electron Devices Meeting (IEDM) 2004, Dec. 2004
Charge-state control of phosphorus donors in SOI MOSFET
Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, Y. Takahashi

2004 International Conference on Solid State Devices and Materials (SSDM), Sep. 2004
[Invited] Fabrication and Application of Silicon Single-Electron Devices
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa

Ultimate lithography and nanodevice engineering (LITHO) 2004, Jun. 2004

2003

[Invited] Silicon nano-devices and single-electron devices
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa

2003 International Semiconductor Device Research Symposium (ISDRS2003), Dec. 2003
[Invited] Silicon Single-Electron Devices Operating with MOSFETs
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa

6th International Conference on New Phenomena in Mesoscopic Systems & 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices (NPMS-6 & SIMD-4), Dec. 2003
Oscillation phase controlled single-electron transistor combined with a memory node with a small MOSFET
K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi

Device Research Conference (DRC) 2003, Jun. 2003

2001

Enhancement of electron emission characteristics from nanocrystalline silicon by planarizarion technique
K. Nishiguchi, X. Zhao, S. Oda

59th Annual Device Research Conference (DRC), Jun. 2001
Ballistic transport under magnetic field in a silicon vertical structure device
K. Nishiguchi, S. Oda

2001 Silicon Nanoelectrinics Workshop (SNW), Jun. 2001
Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots
K. Arai, J. Omachi, K. Nishiguchi, S. Oda

Materials Research Society (MRS) 2001 Spring meeting, Apr. 2001

2000

[Invited] Single Electron Tunneling and Ballistic Transport in Silicon Nanodevices
S. Oda, A. Dutta, K. Nishiguchi, B.J.Hinds, X. Zhao, S.Hatatani

International Symposium on Formation, Physics and Device Application of Quantum Dot Structres (QDS), Dec. 2000
Retardation in the Oxidation rate of Nanocrystalline Silicon Quantum Dots
J. Omachi, R. Nakamura, K. Nishiguchi, S. Oda

Materials Research Society (MRS) 2000 Fall meeting, Nov. 2000
Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots
K. Nishiguchi, X. Zhao, S. Oda

Materials Research Society (MRS) 2000 Fall Meeting, Nov. 2000
Ballistic transport in silicon vertical transistors
K. Nishiguchi, S. Oda

4th International Workshop on Quantum Functional Devices, Nov. 2000
Ballistic transport under magnetic field in silicon vertical transistors
K. Nishiguchi, S. Oda

25th International Conference on Physics of Semiconductors (ICPS), Sep. 2000
Fabrication and characterization of nanocrystalline silicon electron emitter
K. Nishiguchi, X. Zhao, S. Oda

25th International Conference on Physics of Semiconductors (ICPS), Sep. 2000
Single-Electron Transistors with Two Self-Aligned Gates
K. Nishiguchi, S. Oda

2000 International Conference on Solid State Devices and Materials Conference (SSDM2000), Aug. 2000
Electron transport in a single silicon quantum dot structure using a vertical silicon probe
K. Nishiguchi, S. Oda

58th Annual Device Research Conference (DRC), Jun. 2000
Ballistic transport in a silicon vertical transistor
K. Nishiguchi, S. Oda

2000 Silicon Nanoelectrinics Workshop (SNW), Jun. 2000

1999

Fabrication and characterization of silicon quantum-dot memory by ultrafine silicon particles embedded in SiO2
F. Yun, A. Dutta, B. J. Hinds, K. Nishiguchi, S. Hatatani, S. Oda, M.Willander

The fifth International Union Materials Research Society-International Conference on Advanced Materials (IUMRS-ICAM'99), Jun. 1999
Single electron transistor using silicon quantum dots embedded in SiO2 matrix
F. Yun, K. Nishiguchi, A. Dutta, B. J. Hinds, S. Hatatani, S. Oda, M.Willande

The fifth International Union Materials Research Society-International Conference on Advanced Materials (IUMRS-ICAM'99), Jun. 1999
Preparation of nanocrystalline silicon quantum dots by pulsed plasma processed with high deposition rates
K. Nishiguchi, S. Hara, T. Amano, S. Hatatani, S. Oda

Materials Research Society (MRS) 1999 Spring meeting, Apr. 1999

1998

[Invited] Single-Electron Tunneling in Nanocrystalline Silicon
S. Oda, A. Dutta, S-P. Lee, Y. Hayafune, K. Nishiguchi, B. J. Hinds, S. Hatatani

1998 International Conference on Solid State Devices and Materials (SSDM1998), Sep. 1998
Fabrication of Nanodevices Using Silicon Quantum Dots
A. Dutta, Y. Hayafune, S.P. Lee, S. Hara, K. Nishiguchi, S. Oda

International Symposium on Formation, Physics and Device Application of Quantum Dot Structres (QDS), May. 1998