学術論文 | 西口研究室

2026

Thermodynamic Constraints in Dynamic Random-Access Memory Cells: Experimental Verification of Energy Efficiency Limits in Information Erasure
Takase Shimizu, Kensaku Chida, Gento Yamahata, Katsuhiko Nishiguchi

Physical Review Letters, 136 (2026) 117103_1-117103_7, DOI: 10.1103/1sgm-dhys

2025

Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment
Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono

Applied Physics Letters, 125 (2025) 083501_1-083501_6, DOI: 10.1063/5.0239500
Sensing an alternating-current signal beyond the cutoff frequency using a single-electron dynamic random-access memory
Chloe Salhani, Kensaku Chida, Takase Shimizu, Toshiaki Hayashi, Katsuhiko Nishiguchi

Physical Review Applied, 23 (2025) L021001_1-L021001_6, DOI: 10.1103/PhysRevApplied.23.L021001
Coulomb-mediated single-electron heat transfer statistics across capacitively coupled silicon nanodots
Kensaku Chida, Antoine Andrieux, Katsuhiko Nishiguchi

Communications Physics, 9 (2025) 8_1-8_7, DOI: 10.1038/s42005-025-02439-w
Effective Medium Approximation for Variable-Range Hopping
Toshiaki Hayashi, Yasuhiro Tokura, Katsuhiko Nishiguchi

Journal of the Physical Society of Japan, 94 (2025) 044001_1-044001_5, DOI: 10.7566/jpsj.94.044001
Scalable Parallel Single-Electron Pumps in Silicon with Split-Source Control in the Nanoampere Regime
Gento Yamahata, Takase Shimizu, Katsuhiko Nishiguchi, Akira Fujiwara

Nano Letters, 25 (2025) 10202-10208, DOI: 10.1021/acs.nanolett.5c02327

2024

First-Principles Investigation of the Valley Splitting of Si Quantum Slabs
Toshiaki Hayashi, Hiroyuki Kageshima, Yasuhiro Tokura, Jin‐Ichiro Noborisaka, Katsuhiko Nishiguchi

physica status solidi (b), 262 (2024) 2400531_1-2400531_5, DOI: 10.1002/pssb.202400531
Valley splitting by extended zone effective mass approximation incorporating strain in silicon
Jinichiro Noborisaka, Toshiaki Hayashi, Akira Fujiwara, Katsuhiko Nishiguchi

Journal of Applied Physics, 135 (2024) 204302_1-204302_8, DOI: 10.1063/5.0173578
Sub-Femtoampere-Current Detection Using Single-Electron Sensor Operated Around 295 K
Katsuhiko Nishiguchi,Gento Yamahata

IEEE Electron Device Letters, 45 (2024) 1373-1376, DOI: 10.1109/led.2024.3401237

2023

Statistical Properties of Electric Potentials in a Variable-Range Hopping Regime
Toshiaki Hayashi, Yasuhiro Tokura, Katsuhiko Nishiguchi

Journal of the Physical Society of Japan, 92 (2023) 034001_1-034001_5, DOI: 10.7566/jpsj.92.034001
Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor
Katsuhiko Nishiguchi, Hiroshi Yamaguchi, Akira Fujiwara, Herre S. J. van der Zant, Gary A. Steele

Applied Physics Letters, 122 (2023) 043502_1-043502_4, DOI: 10.1063/5.0131808
Subgigahertz Multilayer-Graphene Nanoelectromechanical System Integrated with a Nanometer-Scale Silicon Transistor Driven by Reflectometry
Katsuhiko Nishiguchi, Hiroshi Yamaguchi, Akira Fujiwara

Physical Review Applied, 19 (2023) L011003_1-L011003_5, DOI: 10.1103/physrevapplied.19.l011003
Noise-to-energy conversion in a nanometer-scale dot observed with electron counting statistics
Kensaku Chida, Akira Fujiwara, Katsuhiko Nishiguchi

Applied Physics Letters, 122 (2023) 213502_1-213502_5, DOI: 10.1063/5.0147596
Single-Cell Electrochemical Aptasensor Array
Shuo Li, Yannick Coffinier, Chann Lagadec, Fabrizio Cleri, Katsuhiko Nishiguchi, Akira Fujiwara, Soo Hyeon Kim, Nicolas Clément

ACS Sensors, 8 (2023) 2921-2926, DOI: 10.1021/acssensors.3c00570
Ballistic Brownian Motion of Nanoconfined DNA
Ignacio Madrid, Zhiyong Zheng, Cedric Gerbelot, Akira Fujiwara, Shuo Li, Simon Grall, Katsuhiko Nishiguchi, Soo Hyeon Kim, Arnaud Chovin, Christophe Demaille, Nicolas Clement

ACS Nano, 17 (2023) 17031-17040, DOI: 10.1021/acsnano.3c04349

2022

Seebeck effect in a nanometer-scale dot in a Si nanowire observed with electron counting statistics
Kensaku Chida, Akira Fujiwara, Katsuhiko Nishiguchi

Applied Physics Letters, 121 (2022) 183501_1-183501_6, DOI: 10.1063/5.0114584
Redox-labelled electrochemical aptasensors with nanosupported cancer cells
Shuo Li, Yannic Coffinier, Chann Lagadec, Fabrizio Cleri, Katsuhiko Nishiguchi, Akira Fujiwara, Teruo Fujii, Soo H. Kim, Nicolas Clémen

Biosensors and Bioelectronics, 216 (2022) 114643_1-114643_7, DOI: 10.1016/j.bios.2022.114643

2021

(Invited) Single-Electron Manipulation in an Attofarad-Capacitor DRAM
Katsuhiko Nishiguchi, Kensaku Chida, Akira Fujiwara

ECS Transactions, 104 (2021) 33-48, DOI: 10.1149/10404.0033ecst

2020

Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing
Hisashi Sumikura, Kazuyuki Hirama, Katsuhiko Nishiguchi, Akihiko Shinya, Masaya Notomi

APL Materials, 8 (2020) 031113_1-031113_7, DOI: 10.1063/5.0001922

2019

(Invited) Characteristics of Si Single-Electron Transistor under Illumination
Yasuo Takahashi, Michito Sinohara, Masashi Arita, Atsushi Tsurumaki-Fukuchi, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa

ECS Transactions, 92 (2019) 47-56, DOI: 10.1149/09204.0047ecst
Single-Electron-Resolution Noise Analysis and Application Using High-Sensitivity Charge Sensor
Katsuhiko Nishiguchi, Kensaku Chida, Akira Fujiwara

AAPPS Bulletin, 29 (2019) 4-9, DOI: 10.22661/AAPPSBL.2019.29.3.04

2018

Selective layer-free blood serum ionogram based on ion-specific interactions with a nanotransistor
Ragavendran Sivakumarasamy, Remco Hartkamp, Bertrand Siboule, Jean F. Dufrêche, Katsuhiko Nishiguchi, Akira Fujiwara, Nicolas Clémen

Nature Materials, 17 (2018) 464-470, DOI: 10.1038/s41563-017-0016-y

2017

Power generator driven by Maxwell's demon
Kensaku Chida, Samarth Desai, Katsuhiko Nishiguchi, Akira Fujiwara

Nature Communications, 8 (2017) 15301_1-15301_7, DOI: 10.1038/ncomms15301
Hydrogen Silsesquioxane-Based Nanofluidics
Sathyanarayanan Punniyakoti, Ragavendran Sivakumarasamy, Francois Vaurette, Pierre Joseph, Katsuhiko Nishiguchi, Akira Fujiwara, Nicolas Clement

Advanced Materials Interfaces, 4 (2017) 1601155_1-1601155_5, DOI: 10.1002/admi.201601155
A correlated electromechanical system
Imran Mahboob, Marius Villiers, Katsuhiko Nishiguchi, Daiki Hatanaka, Akira Fujiwara, Hiroshi Yamaguchi

New Journal of Physics, 19 (2017) 033026_1-033026_9, DOI: 10.1088/1367-2630/aa62c6

2016

An electromechanical displacement transducer
Marius Villiers, Imran Mahboob, Katsuhiko Nishiguchi, Daiki Hatanaka, Akira Fujiwara, Hiroshi Yamaguchi

Applied Physics Express, 9 (2016) 086701_1-086701_4, DOI: 10.7567/APEX.9.086701
Hopf and period-doubling bifurcations in an electromechanical resonator
Imran Mahboob, R. Dupuy, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Applied Physics Letters, 109 (2016) 073101_1-073101_4, DOI: 10.1063/1.4960735
Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice
Katsuhiko Nishiguchi, Daisuke Yoshizumi, Yoshiaki Sekine, Kazuaki Furukawa, Akira Fujiwara, Masao Nagase

Applied Physics Express, 9 (2016) 105101_1-105101_4, DOI: 10.7567/APEX.9.105101

2015

Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection
Kensaku Chida, Katsuhiko Nishiguchi, Gento Yamahata, Hirotaka Tanaka, Akira Fujiwara

Applied Physics Letters, 107 (2015) 073110_1-073110_4, DOI: 10.1063/1.4928656
Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
Katsuhiko Nishiguchi, Andres Castellanos-Gomez, Hiroshi Yamaguchi, Akira Fujiwara, Herre S. J. van der Zant, Gary A. Steele

Applied Physics Letters, 107 (2015) 053101_1-053101_4, DOI: 10.1063/1.4927529
Deviation from the law of energy equipartition in a small dynamic-random-access memory
Pierre-Alix Carles, Katsuhiko Nishiguchi, Akira Fujiwara

Japanese Journal of Applied Physics, 54 (2015) 06FG03_1-06FG03_5, DOI: 10.7567/JJAP.54.06FG03
Dispersive and Dissipative Coupling in a Micromechanical Resonator Embedded with a Nanomechanical Resonator
Imran Mahboob, N. Perrissin, Katsuhiko Nishiguchi, Daiki Hatanaka, Yuma Okazaki, Akira Fujiwara, Hiroshi Yamaguchi

Nano Letters, 15 (2015) 2312-2317, DOI: 10.1021/nl5044264
Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor
Mingyu Jo, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, Yasuo Takahashi

Journal of Applied Physics, 118 (2015) 214305_1-214305_6, DOI: 10.1063/1.4936790

2014

A simple and inexpensive technique for PDMS/silicon chip alignment with sub-mu m precision
Ragavendran Sivakumarasamy, Katsuhiko Nishiguchi, Akira Fujiwara, Dominique Vuillaume, Nicolas Clemen

Analytical Methods, 6 (2014) 97-101, DOI: 10.1039/c3ay41618f
A multimode electromechanical parametric resonator array
Imran Mahboob, Mickael Mounaix, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Scientific Reports, 4 (2014) 04448_1-04448_8, DOI: 10.1038/srep04448
Single-electron thermal noise
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara

Nanotechnology, 25 (2014) 275201_1-275201_7, DOI: 10.1088/0957-4484/25/27/275201
Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles
Gento Yamahata, Katsuhiko Nishiguchi, Akira Fujiwara

Physical Review B, 89 (2014) 165302_1-165302_9, DOI: 10.1103/PhysRevB.90.039908
Gigahertz single-trap electron pumps in silicon
Gento Yamahata, Katsuhiko Nishiguchi, Akira Fujiwara

Nature Communications, 5 (2014) 5038_1-5038_7, DOI: 10.1038/ncomms6038
Electric tuning of direct-indirect optical transitions in silicon
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Akira Fujiwara

Scientific Reports, 4 (2014) 6950_1-6950_6, DOI: 10.1038/srep06950
Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy
Abdul Shakoor, Kengo Nozaki, Eiichi Kuramochi, Katsuhiko Nishiguchi, Akihiko Shinya, Masaya Notomi

Optics Express, 22 (2014) 28623-28634, DOI: 10.1364/OE.22.028623

2013

Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor
Katsuhiko Nishiguchi, Hiroshi Yamaguchi, Akira Fujiwara, Herre S. J. van der Zant, Gary A. Steele

Applied Physics Letters, 103 (2013) 143102_1-143102_4, DOI: 10.1063/1.4822430
Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors
Nicolas Clemen, Katsuhiko Nishiguchi, Jean F. Dufreche, David Guerin, Akira Fujiwara, Dominique Vuillaume

Nano Letters, 13 (2013) 3903-3908, DOI: 10.1021/nl4019879
Phonon Lasing in an Electromechanical Resonator
Imran Mahboob, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Physical Review Letters, 110 (2013) 127202_1-127202_5, DOI: 10.1103/PhysRevLett.110.127202
Multi-mode parametric coupling in an electromechanical resonator
Imran Mahboob, Vincent Nier, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Applied Physics Letters, 103 (2013) 153105-null, DOI: 10.1063/1.4824925

2012

Detecting signals buried in noise via nanowire transistors using stochastic resonance
Katsuhiko Nishiguchi,Akira Fujiwara

Applied Physics Letters, 101 (2012) 193108_1-193108_4, DOI: 10.1063/1.4766946
Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect
Katsuhiko Nishiguchi, Akira Fujiwara

Applied Physics Express, 5 (2012) 085002_1-085002_3, DOI: 10.1143/APEX.5.085002
Phonon-cavity electromechanics
Imran Mahboob, Katsuhiko Nishiguchi, Hajime Okamoto, Hiroshi Yamaguchi

Nature Physics, 8 (2012) 387-392, DOI: 10.1038/NPHYS2277
Tuneable electromechanical comb generation
Imran Mahboob, Quentin Wilmar, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Applied Physics Letters, 100 (2012) 113109_1-113109_4, DOI: 10.1063/1.3694041

2011

Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara

Applied Physics Letters, 98 (2011) 033503_1-033503_3, DOI: 10.1063/1.3543849
Interconnect-free parallel logic circuits in a single mechanical resonator
Imran Mahboob, Emmanuel Flurin, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Nature Communications, 2 (2011) 198_1-198_6, DOI: 10.1038/ncomms1201
Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistors
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara

Applied Physics Letters, 98 (2011) 193502_1-193502_3, DOI: 10.1063/1.3589373
A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity
Nicolas Clement, Katsuhiko Nishiguchi, Jean F. Dufreche, David Guerin, Akira Fujiwara, Dominique Vuillaume

Applied Physics Letters, 98 (2011) 014104_1-014104_3, DOI: 10.1063/1.3535958
Evaluation of a Gate Capacitance in the Sub-aF Range for a Chemical Field-Effect Transistor With a Si Nanowire Channel
Nicolas Clement, Katsuhiko Nishiguchi, Akira Fujiwara, Dominique Vuillaume

IEEE Transactions on Nanotechnology, 10 (2011) 1172-1179, DOI: 10.1109/TNANO.2011.2123913
Wide-band idler generation in a GaAs electromechanical resonator
Imran Mahboob, Quentin Wilmar, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Physical Review B, 84 (2011) 113411_1-113411_4, DOI: 10.1103/PhysRevB.84.113411
Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors
Gento Yamahata, Katsuhiko Nishiguchi, Akira Fujiwara

Applied Physics Letters, 98 (2011) 222104_1-222104_3, DOI: 10.1063/1.3595683
Large Array of Sub-10-nm Single-Grain Au Nanodots for use in Nanotechnology
Nicolas Clement, Gilles Patriarche, Kacem Smaali, Francois Vaurette, Katsuhiko Nishiguchi, David Troadec, Akira Fujiwara, Dominique Vuillaume

SMALL, 7 (2011) 2607-2613, DOI: 10.1002/smll.201100915
Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers
Hisashi Sumikura, Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Masaya Notomi

Optics Express, 19 (2011) 25255-25262, DOI: 10.1364/OE.19.025255
Single-Electron Stochastic Resonance Using Si Nanowire Transistors
Katsuhiko Nishiguchi, Akira Fujiwara

Japanese Journal of Applied Physics, 50 (2011) 06GF04_1-06GF04_5, DOI: 10.1143/JJAP.50.06GF04

2010

Enhanced force sensitivity and noise squeezing in an electromechanical resonator coupled to a nanotransistor
Imran Mahboob, Emmanuel Flurin, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Applied Physics Letters, 97 (2010) 253105_1-253105_3, DOI: 10.1063/1.3528454
Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding
Kei Takashina, Masao Nagase, Katsuhiko Nishiguchi, Yukinori Ono, Hiroo Omi, Akira Fujiwara, Toshimasa Fujisawa, Koji Muraki

Semiconductor Science and Technology, 25 (2010) 125001_1-125001_4, DOI: 10.1088/0268-1242/25/12/125001
One-by-one trap activation in silicon nanowire transistors
Nicolas Clement, Katsuhiko Nishiguchi, Akira Fujiwara, Dominique Vuillaume

Nature Communications, 1 (2010) 92_1-92_7, DOI: 10.1038/ncomms1092
Resonant escape over an oscillating barrier in a single-electron ratchet transfer
Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara

Physical Review B, 82 (2010) 033303_1-033303_3, DOI: 10.1103/PhysRevB.82.033303
Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Yukinori Ono, Akira Fujiwara

Applied Physics Letters, 96 (2010) 112102_1-112102_3, DOI: 10.1063/1.3360224

2009

Si nanowire ion-sensitive field-effect transistors with a shared floating gate
Katsuhiko Nishiguchi, Nicolas Clement, Toru Yamaguchi, Akira Fujiwara

Applied Physics Letters, 94 (2009) 163106_1-163106_3, DOI: 10.1063/1.3123002
Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures
Kei Takashina, Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Toshimasa Fujisawa, Yoshiro Hirayama, Koji Muraki

Applied Physics Letters, 94 (2009) 142104_1-142104_3, DOI: 10.1063/1.3112602
Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature
Katsuhiko Nishiguchi, Akira Fujiwara

Nanotechnology, 20 (2009) 175201_1-175201_6, DOI: 10.1088/0957-4484/20/17/175201
Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors
Mohammed A. H. Khalafalla, Yukinoro Ono, Katsuhiko Nishiguchi, Akira Fujiwara

Applied Physics Letters, 94 (2009) 223501_1-223501_3, DOI: 10.1063/1.3147209
Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity
Takasumi Tanabe, Katsuhiko Nishiguchi, Eiichi Kuramochi, Masaya Notomi

Optics Express, 17 (2009) 22505-22513, DOI: 10.1364/OE.17.022505
Room temperature piezoelectric displacement detection via a silicon field effect transistor
Imran Mahboob, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi

Applied Physics Letters, 95 (2009) 233102_1-233102_3, DOI: 10.1063/1.3271525

2008

Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara

Applied Physics Letters, 93 (2008) 222103_1-222103_3, DOI: 10.1063/1.3028649
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi

Japanese Journal of Applied Physics, 47 (2008) 8305_1-8305_6, DOI: 10.1143/JJAP.47.8305
Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
Yukinori Ono, Mohammed A. H. Khalafalla, Katsuhiko Nishiguchi, Kei Takashina, Akira Fujiwara, Seiji Horiguchi, Hiroshi Inokawa, Yasuo Takahashi

Applied Surface Science, 254 (2008) 6252-6256, DOI: 10.1016/j.apsusc.2008.02.161
Low-energy electron emission from an electron enversion layer of a Si/SiO2/Si cathode for nano-decomposition
Katsuhiko Nishiguchi, Masao Nagase, Toru Yamaguchi, Akira Fujiwara, Hiroshi Yamaguchi

Japanese Journal of Applied Physics, 47 (2008) 5106-5108, DOI: 10.1143/JJAP.47.5106
Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi

Applied Physics Letters, 92 (2008) 062105_1-062105_, DOI: 10.1063/1.2870199
Silicon single-charge transfer devices
Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Yasuo Takahashi, Hirosbi Inokawa

Journal of Physics and Chemistry of Solids, 69 (2008) 702-707, DOI: 10.1016/j.jpcs.2007.07.102
Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono

Applied Physics Letters, 92 (2008) 042102_1-042102_3, DOI: 10.1063/1.2837544

2007

Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Yukinori Ono, Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Yamaguchi, Hiroshi Inokawa, Yasuo Takahashi

Applied Physics Letters, 90 (2007) 102106_1-102106_2, DOI: 10.1063/1.2679254
Long retention of gain-cell dynamic random access memory with undoped memory node
Katsuhiko Nishiguchi, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi

IEEE Electron Device Letters, 28 (2007) 48-50, DOI: 10.1109/LED.2006.887625
Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities
Takasumi Tanabe, Katsuhiko Nishiguchi, Akihiko Shinya, Eiichi Kuramochi, Hiroshi Inokawa, Masaya Notomi, Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroshi Fukuda, Hiroyuki Shinojima, Seiichi Itabashi

Applied Physics Letters, 90 (2007) 031115_1-031115_3, DOI: 10.1063/1.2431767
Identification of single and coupled acceptors in silicon nano-field-effect transistors
Mohammed A. H. Khalafalla, Yukinori Ono, Katsuhiko Nishiguchi, Akira Fujiwara

Applied Physics Letters, 91 (2007) 263513_1-263513_3, DOI: 10.1063/1.2824579
Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors
Wancheng Zhang, Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Yamaguchi, Hiroshi Inokawa, Yasuo Takahashi, Nan-Jian Wu

IEICE Transactions on Electronics, E90C (2007) 943-948, DOI: 10.1093/ietele/e90-c.5.943
Infrared detection with silicon nano-field-effect transistors
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Yamaguchi, Hiroshi Inokawa, Yasuo Takahashi

Applied Physics Letters, 90 (2007) 223108_1-223108_3, DOI: 10.1063/1.2744488

2006

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K
Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, Yasuo Takahashi

Physical Review B, 74 (2006) 235317_1-235317_9, DOI: 10.1103/PhysRevB.74.235317
Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
Katsuhiko Nishiguchi, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi

Applied Physics Letters, 88 (2006) 183101_1-183101_3, DOI: 10.1063/1.2200475

2005

Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires
Katsuhiko Nishiguchi, Oliver Crauste, Hideo Namatsu, Seiji Horiguchi, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Hiroshi Inokawa

Japanese Journal of Applied Physics PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44 (2005) 7717-7719, DOI: 10.1143/JJAP.44.7717
Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, Seiji Horiguchi, Yasuo Takahashi

Japanese Journal of Applied Physics PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44 (2005) 2588-2591, DOI: 10.1143/JJAP.44.2588
Manipulation and detection of single electrons for future information processing
Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Hiroshi Inokawa, Yasuo Takahashi

Journal of Applied Physics, 97 (2005) 031101_1-031101_19, DOI: 10.1063/1.1843271

2004

Automatic control of oscillation phase of a single-electron transistor
Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi

IEEE Electron Device Letters, 25 (2004) 31-33, DOI: 10.1109/LED.2003.819913
Multilevel memory using single-electron turnstile
Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi

Electronics Letters, 40 (2004) 229-230, DOI: 10.1049/el:20040195
Multilevel memory using an electrically formed single-electron box
Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi

Applied Physics Letters, 85 (2004) 1277-1279, DOI: 10.1063/1.1783021
Multifunctional Boolean logic using single-electron transistors
Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi

IEICE Transactions on Electronics, E87C (2004) 1809-1817, DOI: null

2002

Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique
Katsuhiko Nishiguchi, Xinwei Zhao, Shunri Oda

Journal of Applied Physics, 92 (2002) 2748-2757, DOI: 10.1063/1.1497703
Ballistic transport in silicon vertical transistors
Katsuhiko Nishiguchi, Shunri Oda

Journal of Applied Physics, 92 (2002) 1399-1405, DOI: 10.1063/1.1489496

2001

Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition
Shunri Oda, Katsuhiko Nishiguchi

Journal de Physique IV, 11 (2001) 1065-1071, DOI: 10.1051/jp4:20013133
Self-aligned double-gate single-electron transistor derived from 0.12-mu m-scale electron-beam lithography
Katsuhiko Nishiguchi, Shunri Oda

Applied Physics Letters, 78 (2001) 2070-2072, DOI: 10.1063/1.1360778

2000

Electron transport in a single silicon quantum structure using a vertical silicon probe
Katsuhiko Nishiguchi, Shunri Oda

Journal of Applied Physics, 88 (2000) 4186-4190, DOI: 10.1063/1.1289777
Two-gate transistor for the study of Si/SiO2 interface in silicon-on-insulator nano-channel and nanocrystalline Si memory device
Bruce J. Hinds, Katsuhiko Nishiguchi, Amit Dutta, Takayuki Yamanaka, Shigeo Hatanani, Shunri Oda

Japanese Journal of Applied Physics PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 39 (2000) 4637-4641, DOI: 10.1143/JJAP.39.4637
Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate
Katsuhiko Nishiguchi, Shunri Oda

Applied Physics Letters, 76 (2000) 2922-2924, DOI: 10.1063/1.126517